Solid state image pick-up device with a shutter function

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Details

357 30, H01L 2978, H01L 2714

Patent

active

047179457

ABSTRACT:
A solid state image pick-up device with a shutter function including a number of charge coupled devices of vertical overflow domain type is disclosed. A light receiving portion comprises a p.sup.- epitaxial layer arranged on a main surface of an n.sup.+ substrate and an n.sup.+ diffusion surface region is provided in a surface of the p.sup.- layer. A p.sup.+ control gate for controlling a potential barrier between the n.sup.+ diffusion surface region and the p.sup.- epitaxial layer is formed in the epitaxial layer adjacent to the light receiving portion, and a p well region is formed in the epitaxial layer adjacent to the light receiving portion. During a shutter close period, i.e. before a signal charge storing operation, a control voltage applied to the control gate and a reverse bias voltage applied across the n.sup.+ substrate and p.sup.- epitaxial layer are so adjusted that a potential barrier between the epitaxial layer and surface region is made sufficiently small to completely discharge all the charge stored in the light receiving portion into the substrate serving as the overflow drain.

REFERENCES:
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patent: 3965481 (1976-06-01), Esser
patent: 4028716 (1977-06-01), van Santen et al.
patent: 4131810 (1978-12-01), Knaver et al.
patent: 4148048 (1979-04-01), Takemoto et al.
patent: 4149307 (1979-04-01), Henderson
patent: 4245164 (1981-01-01), Funahashi
patent: 4373167 (1983-02-01), Yamada
patent: 4467341 (1984-08-01), Suzuki

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