Patent
1986-06-27
1988-01-05
Edlow, Martin H.
357 30, H01L 2978, H01L 2714
Patent
active
047179457
ABSTRACT:
A solid state image pick-up device with a shutter function including a number of charge coupled devices of vertical overflow domain type is disclosed. A light receiving portion comprises a p.sup.- epitaxial layer arranged on a main surface of an n.sup.+ substrate and an n.sup.+ diffusion surface region is provided in a surface of the p.sup.- layer. A p.sup.+ control gate for controlling a potential barrier between the n.sup.+ diffusion surface region and the p.sup.- epitaxial layer is formed in the epitaxial layer adjacent to the light receiving portion, and a p well region is formed in the epitaxial layer adjacent to the light receiving portion. During a shutter close period, i.e. before a signal charge storing operation, a control voltage applied to the control gate and a reverse bias voltage applied across the n.sup.+ substrate and p.sup.- epitaxial layer are so adjusted that a potential barrier between the epitaxial layer and surface region is made sufficiently small to completely discharge all the charge stored in the light receiving portion into the substrate serving as the overflow drain.
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Akagi Toshimasa
Ishii Tomoji
Ohta Yoshinori
Yusa Atsushi
Edlow Martin H.
Limanek Robert P.
Olympus Optical Co,. Ltd.
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