High speed broadband silicon photodetector

Details High speed broadband silicon photodetector High speed broadband silicon photodetector

1990-03-22

1991-10-22

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

357 30, H01J 4014, H01L 2714

Patent

active

050597876

ABSTRACT:
A high speed wideband silicon photodetector is formed from a photosensitive junction in a relatively thin epitaxial layer of silicon grown on a sapphire substrate using SOS technology. The photodetector is backside illuminated, that is, illumination to be detected is cause to strike a receptor surface of the sapphire substrate so that it can reach the photosensitive junction in the silicon layer even with the shallower minimum penetration depths available at higher frequencies. A bias voltage may be applied to extend the depletion region from the photosensitive junction to the silicon sapphire interface. A magnesium fluoride anti-reflective coating may be used on the sapphire reflective surface.

REFERENCES:
patent: 4143266 (1979-03-01), Borel et al.
patent: 4346395 (1982-08-01), Ouichi

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