Method of manufacturing a semiconductor device using epitaxially

Details Method of manufacturing a semiconductor device using epitaxially Method of manufacturing a semiconductor device using epitaxially

Filed on

1983-01-31

Date issued

1984-10-30

Examiner

Roy, Upendra

Patent Class

Metal treatment

SubClass

Compositions

SubSubClass

Heat treating

Other Related Categories

29576B, 29576T, 148187, 357 91, H01L 21265

Type

Patent

Status

active

Patent number

044798300

Description

ABSTRACT:
A method for manufacturing a semiconductor device is shown which includes a step of ion implanting an impurity into an impurity-region formation region of a semiconductor substrate. Before or after the ion implantation step, silicon ions are implanted in a dose of 1.times.10.sup.13 to 1.times.10.sup.15 /cm.sup.2 into the impurity-region formation region and then the silicon ions so implanted are subjected to an activation treatment to form an epitaxial grown protrusion on the surface of the substrate. The protrusion is used as an alignment mark in the subsequent mask alignment step for photolithography.

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patent: 4144100 (1979-03-01), McIver et al.
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Csepregi et al. Appl. Phys. Letts. 29 (1976) 645.
Seidel et al. Appl. Phys. Letts. 29 (1976) 648.
Bauer et al. Appl. Phys. Letts. 20 (1972) 107.
Crowder et al. in Ion Impl.sup.N. in Semiconductors.
Plenum, N.Y. 1973, p. 257.
Blood et al. J. Appl. Phys. 50 (1979) 173.

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