1977-09-29
1979-05-15
Edlow, Martin H.
357 24, 357 23, H01L 2714, H01L 2778
Patent
active
041550943
ABSTRACT:
In a semiconductor photoelectric device comprising a plurality of photodiodes, MOS transistor switches and signal output means which are provided on a semiconductor substrate, a solid-state imaging device characterized in that said each photodiode is constructed of a PN-junction diode and an MIS or MOS diode. Means are provided for permitting incident light to fall on only the PN-junction diode.
REFERENCES:
patent: 3883437 (1975-05-01), Numma et al.
Ohba Shinya
Uchiumi Kyotake
Edlow Martin H.
Hitachi , Ltd.
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