Semiconductor device with an improved crossing structure at the

Details Semiconductor device with an improved crossing structure at the Semiconductor device with an improved crossing structure at the

1983-11-21

1986-09-02

James, Andrew J.

357 54, 357 84, 357 53, 357 71, H01L 2702

Patent

active

046099352

ABSTRACT:
A semiconductor integrated circuit device has an improved crossing structure between a resistor region and a wiring conductor layer, and there is provided between the resistor region and the wiring conductor an additional conductor layer isolated from both of them. The additional conductor layer is substantially AC-grounded. As a result, the signal transmission caused by the capacitance-coupling between the resistor region and the wiring conductor is prevented by the additional conductor layer.

REFERENCES:
patent: 3575371 (1971-04-01), Brown et al.
patent: 3602782 (1971-08-01), Klein
patent: 4450470 (1984-05-01), Shiba
Fillmore, "Shielded Integrated Circuit Crossunder," RCA Technical Notes, No. 1153, 5/24/76.

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