Semiconductor device having grooves of different depths for impr

Details Semiconductor device having grooves of different depths for impr Semiconductor device having grooves of different depths for impr

1984-04-06

1986-09-02

Edlow, Martin H.

357 49, 357 55, 357 59, H01L 2702

Patent

active

046099344

ABSTRACT:
A semiconductor device having grooves of different depths for improved device isolation is presented. In the preferred embodiment of the present invention, a first groove and a second groove provide isolation of devices within regions of different conductivity type. The first and second grooves are each shallower than the conductivity type region in which they reside. A third groove is formed between adjacent regions of different conductivity type. The third groove is deeper than both the first groove and the second groove and extends to a depth sufficient to penetrate the substrate of the semiconductor device. The third groove operates to prevent latch-up between devices in the adjacent well regions. Filler materials are used to fill the first, second and third grooves to improve their respective isolating characteristics.

REFERENCES:
patent: 4079407 (1978-03-01), Hutson
patent: 4160991 (1979-07-01), Anantha
patent: 4214315 (1980-07-01), Anantha
patent: 4240095 (1980-12-01), Rossetti
patent: 4255207 (1981-03-01), Nicolay

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