Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1993-04-14
1994-11-15
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257514, 257518, H01L 2972
Patent
active
053650905
ABSTRACT:
The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.
REFERENCES:
patent: 3242018 (1966-03-01), Grabmaier et al.
patent: 4935797 (1990-06-01), Jambotkar
patent: 4963957 (1990-10-01), Ohi et al.
patent: 4969026 (1990-11-01), Vander Velden et al.
patent: 5006912 (1991-04-01), Smith et al.
patent: 5140400 (1992-08-01), Morishita
patent: 5198689 (1993-03-01), Fujioka
Cressler et al., `Sub-30-PS ECL Circuit . . . SiGe-Base Bipolar Transistors`, IEEE Electron Device Letters, vol. 12, No. 4, Apr. 1991, pp. 166-168.
Kimura Kouji
Kumamaru Kuniaki
Naruse Hiroshi
Taka Shin-ichi
Kabushiki Kaisha Toshiba
Meier Stephen D.
Ngo Ngan V.
LandOfFree
Hetero bipolar transistor and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hetero bipolar transistor and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hetero bipolar transistor and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1099519