Method of exposing patttern of semiconductor devices and stencil

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430 22, 430311, 430394, 430269, G03F 900

Patent

active

053647181

ABSTRACT:
A method is provided for exposing a semiconductor device pattern onto a semiconductor substrate by repeatedly exposing an adjoining arrangement of a plurality of unit patterns. The device pattern is first divided into a plurality of unit patterns. Then, a stencil mask is provided with transmitting openings having shapes conforming to the respective unit patterns. Pattern lines on the stencil mask of the unit patterns which are to be connected with each other have at least one connecting end provided with at least one protrusion having a width less than that of the corresponding pattern lines. The protrusion on the connecting end reduces errors such as interruptions or excessive broadening in an exposed pattern line due to misalignment. Also disclosed is a stencil mask for carrying out the present inventive method.

REFERENCES:
patent: 4181860 (1980-01-01), Sumi
patent: 4591540 (1986-05-01), Bohlen et al.
patent: 4895780 (1990-01-01), Nissan-Cohen et al.
Sze, S. M., VLSI Technology, Section 7.4.3 on pp. 284-286, Bell Laboratories, 1983.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of exposing patttern of semiconductor devices and stencil does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of exposing patttern of semiconductor devices and stencil, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of exposing patttern of semiconductor devices and stencil will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1096463

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.