Process for non-selectively forming deposition film on a non-ele

Details Process for non-selectively forming deposition film on a non-ele Process for non-selectively forming deposition film on a non-ele

1992-12-22

1994-11-15

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427576, 427578, 427252, 4272551, 4272552, 427299, B05D 306, B05D 300, C23C 1600

Patent

active

053646649

ABSTRACT:
A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450.degree. C.

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Tsubouchi et al., 1990 Symposium on VLSI Technology, Jun. 1990, pp. 5-6.
Ruzyllo, J. Electrochemical Society 134 (7), Jul. 7, 1987, pp. 1869-1870.
Masu et al., Appl. Phys. Lett. 56 (16), Apr. 16, 1990, pp. 1543-1545.

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