1985-12-11
1987-02-03
Clawson, Jr., Joseph E.
357 20, 357 38, 357 86, H01L 2906
Patent
active
046411623
ABSTRACT:
A current limited insulated gate transistor (IGT) is disclosed wherein the individual cells are rectangular and each has four discrete, mutually spaced emitter regions to provide a reduced gate periphery. Each cell lacks emitter portions at the cell corners to reduce current crowding in the corner areas. The size of each cell is kept small to decrease the forward voltage drop of the IGT at its operating current level and the spacing between individual cells of the IGT is minimized in order to further reduce the maximum IGT current. These features enable the cell to survive a short-circuit load condition by preventing the maximum current from reaching the latch-up level.
REFERENCES:
patent: 4580154 (1986-04-01), Coe
Clawson Jr. Joseph E.
Corwin Stanley C.
General Electric Company
Mollon Mark
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