Frequency doubler

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307304, 333218, 328 20, H03B 1900

Patent

active

047345918

ABSTRACT:
A frequency doubler is disclosed in which an input signal is supplied to the respective gates of first and second field effect transistors with a phase difference corresponding to a one half wave of the input signal and a signal of a doubler frequency wave is obtained from the drain of the second field effect transistor.

REFERENCES:
patent: 4308473 (1981-12-01), Carnes
patent: 4327343 (1982-04-01), Cornish
patent: 4334324 (1982-06-01), Hoover
patent: 4511813 (1985-04-01), Pan
patent: 4611184 (1986-09-01), Kumar
Pucel, "Power Combiner Performance of GaAs MESFET", Microwave Journal (USA), vol. 23, No. 3, Mar. 80, pp. 51-56.
Performance of a Dual-Gate GaAs MESFET as a Frequency Multiplier at Ku-Bands; Philip T. Chen et al; IEEE Trans. on Microwave Theory and Techniques, vol. MTT-27, No. 5, May 1979, pp. 411-415.
Balanced Dual Gate GaAs FET Doublers; Roger Stancliff; MTT-S International Microwave Symposium Digest, 1981, pp. 143-145.

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