Semiconductor laser

Details Semiconductor laser Semiconductor laser

1986-03-13

1989-02-07

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 96, 372102, H01S 309, H01S 308

Patent

active

048036900

ABSTRACT:
A semiconductor laser comprising a triple-layered structure composed of an active layer for laser oscillation and a pair of optical guiding layers sandwiching said active layer therebetween, wherein the refractive index of each of said optical guiding layers is smaller than that of said active layer, and the bandgap of each of said optical guiding layers is greater than that of said active layer, and moreover diffraction gratings with different pitches are positioned on the outer side of each of said optical guiding layers.

REFERENCES:
patent: 4178604 (1979-12-01), Nakamura et al.
Patent Abstracts of Japan, vol. 6, No. 72 (E-105) (950), May 7, 1982; & JP-A-57 12 585 (Nippon Denki K.K.) 22-01-1982.

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