Deep depletion CCD imager

Details Deep depletion CCD imager Deep depletion CCD imager

1982-12-21

1986-04-01

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

357 2312, 357 30, 377 60, 377 62, H01L 2978, H01L 2714, H01L 3100, G11C 1928

Patent

active

045801550

ABSTRACT:
An integrated circuit device has a high resistivity silicon substrate in which a low resistivity region exists. A charge coupled array is fabricated in the high resistivity region and an output circuit is fabricated in the low resistivity region. At the boundary between the high and low resistivity regions a floating diffusion provides charge coupling between the array and the circuit. The low resistivity region is prepared in a high resistivity substrate at a temperature in excess of 1000.degree. C. to obtain a sufficiently deep low resistivity region but subsequent processing to produce the charge coupled array and the control circuit is performed at lower temperatures to minimize thermal degradation and contamination of the high resistivity region.

REFERENCES:
Kosonocky et al., "Control of Blooming in Charge-Coupled Imagers", RCA Review, vol. 35, (3/74) pp. 2-24.
Dawson et al., "A CMOS/Buried-N-Channel CCD . . . ", RCA Review, vol. 38, (9/77), pp. 406-435.

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