Semiconductor devices

Details Semiconductor devices Semiconductor devices

1975-09-09

1977-02-01

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29590, 148 15, B01J 1700

Patent

active

040055230

ABSTRACT:
A process for the production of p-n junctions which comprises preparing a suitable silicon type-n crystal of 100.OMEGA./cm to several k.OMEGA./cm with the orientation (111), (112) and (110), heating the crystal to a temperature of between 700.degree. C and 800.degree. C, and applying to the (111) surface a load of from 0.5 kg to 1.2 kg during a period of time of from 5 to 50 seconds by means of a suitable pointed instrument, removing the load and welding the thus produced dislocation region to a suitable conductor. Advantageously the silicon crystal is chemically polished after the deformation, and the welding is advantageously effected by pressing a metal wire of an inert metal to the dislocation region and applying to same a tungsten electrode, the wire being the second electrode, the welding being effected by condenser welding.

REFERENCES:
patent: 2840495 (1958-06-01), Treuting
patent: 2948642 (1960-08-01), MacDonald
patent: 3252203 (1966-05-01), Alberts

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