Metal treatment – Compositions – Heat treating
Patent
1985-05-22
1987-04-07
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29576T, 148187, 148DIG93, 156635, 427 531, H01L 21265, B05D 512
Patent
active
046558497
ABSTRACT:
A semiconductor processing technique is disclosed for reasonantly reacting with a semiconductor wafer substrate and cleaving surface atomic bonds to create dangling bonds. The substrate is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designed wavelength to resonantly photolytically cleave surface bonds and create the dangling bonds. This enhances further processing operations such as single crystalline silicon deposition and enhanced bonding and growth thereof.
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Benjamin James A.
Hoppie Lyle O.
Pardee John B.
Schachameyer Steven R.
Eaton Corporation
Roy Upendra
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