Photoconductive member with amorphous germanium and silicon regi

Details Photoconductive member with amorphous germanium and silicon regi Photoconductive member with amorphous germanium and silicon regi

1984-10-19

1986-04-01

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 63, 430 84, 430 95, G03G 508, G03G 5082, G03G 5085

Patent

active

045797978

ABSTRACT:
A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing nitrogen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface between said first and second layer region and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.

REFERENCES:
patent: 4451546 (1984-05-01), Kawamura et al.
patent: 4490454 (1984-12-01), Misumi et al.
patent: 4491626 (1985-01-01), Kawamura et al.

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