Method of growing a resistive epitaxial layer on a short lifetim

Details Method of growing a resistive epitaxial layer on a short lifetim Method of growing a resistive epitaxial layer on a short lifetim

1984-07-27

1986-04-01

Roy, Upendra

Metal treatment

Compositions

Heat treating

148175, 148187, 29571, 29576B, H01L 2120, H01L 21225, H01L 21265

Patent

active

045796017

ABSTRACT:
A method for manufacturing a semiconductor device has the steps of: forming a first thin single-crystal semiconductor layer on a semiconductor substrate of one conductivity type which contains oxygen, the first thin single-crystal semiconductor layer having a higher resistivity than that of the semiconductor substrate and having the same conductivity type as that of the semiconductor substrate; ion-implanting an electrically inactive impurity in the first thin single-crystal semiconductor layer; forming a second thin single-crystal semiconductor layer on the first thin single-crystal semiconductor layer, the second thin single-crystal semiconductor layer having the same conductivity type as that of the semiconductor substrate and having a higher resistivity than that of the semiconductor substrate; performing annealing for not less than four hours at a temperature of 550.degree. C. to 900.degree. C. after the electrically inactive impurity is ion-implanted; and forming a cell of a dynamic random access memory in the second thin single-crystal semiconductor layer, the cell having one transistor and one capacitor.

REFERENCES:
patent: 4001864 (1977-06-01), Gibbons
patent: 4053925 (1977-10-01), Burr et al.
patent: 4082571 (1978-04-01), Graul et al.
patent: 4116719 (1978-09-01), Shimizu et al.
patent: 4318750 (1982-03-01), Rai-Choudhury et al.
patent: 4328610 (1982-05-01), Thompson et al.
patent: 4332627 (1982-06-01), Schmitt et al.
patent: 4459159 (1984-07-01), O'Mara
patent: 4490182 (1984-12-01), Scovell
patent: 4505759 (1985-03-01), O'Mara
patent: 4506436 (1985-03-01), Bakeman, Jr. et al.
patent: 4535529 (1985-08-01), Jochems
Cerofouno et al., J. Appl. Phys. 55 (9184) 579.
Srinivasan, "Silicon Epitaxy for High Performance Integrated Circuits," Solid State Technology, Nov. 1981.
Yaney et al., "The Use of Thin Epitaxial Silicon Layers For MOS VLSI," IEDM, pp. 236-239, Nov. 1981.
IBM Technical Disclosure Bulletin, vol. 25, No. 4, Sep. 1982.
Extended Abstracts of the Electrochemical Society, vol. 82-2, Oct. 1982.
Japanese Journal of Applied Physics, vol. 21, Supplement 21-1, 1982.

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