Non-volatile semiconductor memory device and fabrication method

Details Non-volatile semiconductor memory device and fabrication method Non-volatile semiconductor memory device and fabrication method

1999-02-16

2000-09-19

Fears, Terrell W.

Static information storage and retrieval

Floating gate

365175, G11C 1300

Patent

active

061221929

ABSTRACT:
A non-volatile semiconductor memory device is provided with a circuit that protects a tunnel oxide film from the charging phenomenon. This circuit comprises a first junction diode including an N.sup.+ -type diffusion layer and a P-type well, and a second junction diode including a P-type well and an N-type well. When a voltage applied to the control gate is greater than all of a write voltage, a read voltage, and an erasure voltage that would be applied to the control gate, a current is guided through that circuit.

REFERENCES:
patent: 5978258 (1999-11-01), Manning
Nikkei Microdevices, Oct. 1988, pp. 102-111.

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