Control and 3-dimensional simulation model of temperature variat

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364489, 20429809, 20429803, 438 5, 438795, B28D 500

Patent

active

056549040

ABSTRACT:
Temperature nonuniformity across a semiconductor wafer during both the transient and steady state of a typical rapid thermal processing (RTP) cycle has been a deterrent in using RTP in many ULSI unit processes. The present invention consists of a three-dimensional mathematical model to study the temperature variation across a wafer in an RTP oven for given heating element power settings, during both the transient and steady state of a typical thermal cycle and control a heating element by a computer program. The validity of various models have been checked by performing a series of oxidation experiments.

REFERENCES:
patent: 4913790 (1990-04-01), Narita et al.
patent: 5122636 (1992-06-01), Jung
patent: 5567267 (1996-10-01), Kazama et al.

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