Semiconductor devices incorporating p-type and n-type impurity i

Details Semiconductor devices incorporating p-type and n-type impurity i Semiconductor devices incorporating p-type and n-type impurity i

1993-12-29

1995-10-03

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 85, 257 99, 257192, 257465, 257609, 372 46, H01L 3300, H01L 29161, H01L 29167

Patent

active

054554292

ABSTRACT:
Novel semiconductor devices are monolithically defined with p-type and n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and p-type layer disordered regions with sufficiently abrupt transitions from disordered to as-grown material. The novel devices include a heterojunction bipolar transistor monolithically integrated with an edge emitting heterostructure laser or a surface emitting laser, a heterostructure surface emitting laser, a heterostructure surface emitting laser having active distributed feedback, devices containing multiple buried layers which are individually contacted such as p-n junction surface emitting lasers, carrier channeling devices, and "n-i-p-i" or hetero "n-i-p-i" devices, and novel interdigitated structures, such as optical detectors and distributed feedback lasers.

REFERENCES:
patent: 4824798 (1989-04-01), Burnham et al.
patent: 4837607 (1989-06-01), Kemmer et al.
patent: 4987468 (1991-01-01), Thornton
patent: 5013684 (1991-05-01), Epler et al.
patent: 5038185 (1991-08-01), Thornton
patent: 5062115 (1991-10-01), Thornton
patent: 5164797 (1992-11-01), Thornton
patent: 5231298 (1993-07-01), Daly
patent: 5317586 (1994-05-01), Thornton et al.
"The Diffusion of Silicon in Gallium Arsenide", G. R. Antell, 1965, Solid-State Electronics, vol. 8 pp. 943-946.
"Diffusion of sillicon in gallium arsenide using rapid thermal processing: Experimental and model", Greiner et al., Applied Physics Letters, vol. 44(8) pp. 750-752 (Apr. 15, 1984).
"Disorder of an Al.sub.x Ga.sub.1-x As-GaAs Superlattice by Donor Diffusion", K. Meehan, et al., Applied Physics Letters, vol. 45(5), pp. 549-551, (Sep. 1, 1984).
"Design of Fabry-Perot Surface-Emitting Lasers with a Periodic Gain Structure", S. W. Corzine et al., IEEE Journal of Quantum Electronics, vol. 25, No. 6, pp. 1513-1524, Jun. 1989.
"Fabrication of Low Threshold Voltage Microlasers", Scherer et al., Electronics Letters, vol. 28, No. 13, pp. 1224-1226, Jun. 18, 1992.
"Channelling photodiode: A new versatile interdigitated p-n junction photodetector", F. Capasso et al., Applied Phys. Lett. 41(1)), pp. 944-946, Nov. 15, 1982.
"Doping (n-i-p-i) Superlattices", G. Dohler et al., Academic Press, Inc., Synthetic Modulated Structures, pp. 163-214, 1985.

Affiliated with

Also associated with

Rating

Semiconductor devices incorporating p-type and n-type impurity i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices incorporating p-type and n-type impurity i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices incorporating p-type and n-type impurity i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1078972