Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1996-04-02
2000-01-04
Renner, Craig A.
Dynamic magnetic information storage or retrieval
Head
Hall effect
G11B 533
Patent
active
060116749
ABSTRACT:
The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
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Akagi Kyo
Fukuoka Hirotsugu
Futamoto Masaaki
Kitada Masahiro
Kobayashi Toshio
Hitachi , Ltd.
Renner Craig A.
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