Method of improving film adhesion between metallic silicide and

Details Method of improving film adhesion between metallic silicide and Method of improving film adhesion between metallic silicide and

1984-12-21

1986-07-01

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 148 15, 148187, 148DIG140, 357 91, 427 38, H01L 21263, H01L 21265

Patent

active

045971633

ABSTRACT:
A method of improving film adhesion during the fabrication of thin film integrated circuits is disclosed. The method includes the steps of depositing a metallic silicide on a substrate and then implanting selected ions at predetermined doses and energies into the silicide layer, whereby tensile stress generated during fabrication processes is reduced. In one embodiment of the invention, the substrate is provided with a polycrystalline silicon layer and the silicide is of the structure MSi.sub.x, where M is a refractory metal and x is greater than 2. Preferred doses range from 10.sup.15 to 10.sup.17 cm.sup.-2, while preferred energies range from 40 to 150 keV.

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