Method of fabricating a polysilicon transistor with a high carri

Details Method of fabricating a polysilicon transistor with a high carri Method of fabricating a polysilicon transistor with a high carri

1985-08-09

1986-07-01

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

148174, 148DIG1, 148DIG118, 427 86, H01L 2194, H01L 21322

Patent

active

045971609

ABSTRACT:
A method for making a TFT comprises forming an amorphous silicon layer having a smooth upper surface. An insulating layer is then formed on the smooth surface at or below the critical temperature for the instantaneous crystallization of amorphous. This slowly converts the amorphous silicon to polycrystalline silicon while retaining the smooth surface. TFTs incorporating the invention have a relatively high field effect (surface) mobility.

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patent: 3911168 (1975-10-01), Schinella et al.
patent: 4358326 (1982-11-01), Doo
patent: 4376657 (1983-03-01), Nagasawa et al.
Applied Physics Letters, vol. 42, No. 9, May 1, 1983, Kinsbron et al., "Crystallization of Amorphous Silicon Films During LPCVD", pp. 835-837.
Ghandhi, S. K., "VLSI Fabrication Principles", 1983 by John Wiley & Sons, Inc., pp. 430-435.

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