Method and apparatus for identifying failure sites on IC chips

Details Method and apparatus for identifying failure sites on IC chips Method and apparatus for identifying failure sites on IC chips

1998-01-14

2000-09-19

Picardat, Kevin M.

Semiconductor device manufacturing: process

With measuring or testing

438 4, 438 16, 324750, 324753, H01L 2166

Patent

active

061210595

ABSTRACT:
The present invention provides a method for identifying failure sites on a defective IC chip by utilizing a glass substrate equipped with a heating device and then coating a liquid crystal material layer on top. The liquid crystal device can be positioned in contact, or immediately adjacent to a surface of an IC device to be detected. After the liquid crystal temperature is raised to just below its transition temperature, a voltage signal can be fed into the IC device to trigger an overheating at a short or leakage to raise the liquid crystal material immediately adjacent to the short or leakage to a temperature above its transition temperature. Hot spots are thus produced to appear as bright spots for easy identification under an optical microscope.

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patent: 5777487 (1998-07-01), Burgess et al.
patent: 5804980 (1998-09-01), Nikawa
patent: 5963040 (1999-10-01), Liu

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