Composite type semiconductor and preparation thereof

Details Composite type semiconductor and preparation thereof Composite type semiconductor and preparation thereof

1974-09-12

1976-10-19

Wojciechowicz, Edward J.

357 44, 357 49, 357 86, H01L 2704, H01L 2712, H01L 2702

Patent

active

039874788

ABSTRACT:
A composite type semiconductor is disclosed which comprises a semiconductor substrate having one conductive type. A plurality of semiconductor elements are formed by selective diffusion on a first main surface of the semiconductor substrate. An isolating diffused region for isolating and insulating the semiconductor elements is provided and the region is formed between the semiconductor elements by selectively diffusing impurities to impart an opposite conductive type to the substrate. An electrode metal layer which is adhered on a second main surface of the semiconductor substrate commonly connects each end of the semiconductor elements.
A process for preparing a composite type semiconductor is disclosed which comprises forming an isolating diffused region for isolating and insulating a semiconductor substrate to provide a plurality of regions by selectively diffusing impurities for imparting an opposite conductive type to that of the substrate, forming a plurality of semiconductor elements by selectively diffusing a specific impurity from the first main surface in the plurality of the isolated and insulated regions, forming an electrode metal layer connecting commonly each end of the plurality of the semiconductor elements, on the second main surface, and forming a plurality of electrodes corresponding to each of the semiconductor elements, on the first main surface of the semiconductor substrate.

REFERENCES:
patent: 3795846 (1974-03-01), Ogawa et al.

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