Integrated structure with reduced injection of current between h

Details Integrated structure with reduced injection of current between h Integrated structure with reduced injection of current between h

1997-05-13

2000-05-09

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257547, H01L 27082, H01L 2900

Patent

active

060607629

ABSTRACT:
An integrated semiconductor structure comprises two homologous P-type regions formed within an N-type epitaxial layer. A P-type region formed in the portion of the epitaxial layer disposed between the two P-type regions includes within it an N-type region. This N region is electrically connected to the P region by means of a surface metal contact. The structure reduces the injection of current between the first and second P regions, at the same time preventing any vertical parasitic transistors from being switched on.

REFERENCES:
patent: 5287047 (1994-02-01), Murayama et al.
patent: 5514901 (1996-05-01), Peppiette et al.
Patent Abstracts of Japan, vol. 11, No. 363, JP-A-62136872 (Oki Electric Ind Co. Ltd.), Jun. 19, 1987.
Patent Abstracts of Japan, vol. 11, No. 122, JP-A-P61268036 (Toshiba Corp.), Nov. 27, 1986.

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