MESfield effect transistor

Details MESfield effect transistor MESfield effect transistor

1998-06-15

2000-05-09

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257473, 257635, 257638, 257640, H01L 29812

Patent

active

060607343

ABSTRACT:
In the manufacture of a field effect transistor which can improve the breakdown voltage between a gate and a drain and can also prevent a gate lag, an oxide film is formed or wet cleaning is carried out over the semiconductor surface of an inter-source-gate region while a nitride film is formed or dry cleaning is carried out over the semiconductor surface of an inter-gate-drain region, in order that surface traps in the semiconductor surface of the inter-gate-drain region, which is not covered with electrode metal, is greater in number than those in the semiconductor surface of the inter-source-gate region.

REFERENCES:
patent: 5376812 (1994-12-01), Oku
patent: 5548144 (1996-08-01), Kohno
patent: 5675159 (1997-10-01), Oku et al.
patent: 5698888 (1997-12-01), Fukaishi
patent: 5796132 (1998-08-01), Nakano et al.

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