Method for forming shallow trench isolation with global planariz

Details Method for forming shallow trench isolation with global planariz Method for forming shallow trench isolation with global planariz

1997-12-10

2000-05-09

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 38, 438719, 438723, H01L 2100

Patent

active

060603941

ABSTRACT:
This invention describes a method to form shallow trench isolation with global planarization. The process steps consist of depositing the etching-resistant masked layers stacked on silicon substrate, where the isolated area region is defined; then the isolated area region is dryly etched and is to be deposited oxidation-resistant thin films and form oxidation-resistant spacers around the side walls of the isolated region with the deposited thin films. Because the thin films and spacers are oxidation resistant, during growth of an oxide film within the isolated area, the bird's beak lateral encroachment can be prevented. This results in nearly abrupt interfaces at the sides of the isolated area. In addition, a high temperature oxidation process is employed to produce a high quality of oxide film and simultaneously recover the possible damages from dry etching. This method for forming shallow trench isolation provides a better global planarization, providing a smoother platform on which further circuit elements can be built.

REFERENCES:
patent: 4139442 (1979-02-01), Bondur et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4965652 (1990-10-01), Magdo et al.
patent: 5229326 (1993-07-01), Dennison et al.
patent: 5677229 (1997-10-01), Morita et al.
patent: 5817567 (1998-10-01), Jang et al.
patent: 5851899 (1998-12-01), Weiganol

Affiliated with

Also associated with

Rating

Method for forming shallow trench isolation with global planariz does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming shallow trench isolation with global planariz, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming shallow trench isolation with global planariz will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1064598