1985-06-10
1987-11-10
James, Andrew J.
357 2, 357 237, 357 45, 357 49, G02F 113
Patent
active
047053585
ABSTRACT:
Insulated-gate-field-effect transistors are disposed on an insulating substrate as a matrix. Each gate electrode of the transistors is covered with each gate insulating film and semiconductor film acting as a channel of the transistors, respectively.
REFERENCES:
patent: 3824003 (1974-07-01), Koda et al.
patent: 4431271 (1984-02-01), Okubo
Matsuura, M., Takafuji, Y., Nonomura, K., Funada, F., Wada, T., "LCD Panel Using Te TFT Array", Proc. of the SID, vol. 24/Jan. 1984, pp. 17-20.
Motte Shunichi
Shimbo Masafumi
Yamazaki Tsuneo
Adams Bruce L.
Crane Sara W.
James Andrew J.
Seiko Instruments & Electronics Ltd.
Wilks Van C.
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