Single-chamber apparatus for in-situ generation of dangerous pol

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

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20429807, 20429809, 20429812, 20419211, 156345, 42218604, 42218622, 42218625, 42218629, 42218630, 422 31, C10G 3500

Patent

active

050592920

ABSTRACT:
A single-chamber apparatus and method are described for in-situ generation of dangerous polyatomic gases and radicals from solid or liquid source materials contained within a porous foamed structure. A cooled cathode is provided for establishing a plasma discharge within the chamber, and a heat source is provided to maintain the porous foamed structure within a fixed temperature range chosen such that the source material is removed from the porous foamed structure by evaporation induced by heat from the heat source while at the same time preventing consumption by evaporation of the porous foamed structure itself.

REFERENCES:
patent: 3856654 (1974-12-01), George
patent: 3895602 (1975-07-01), Bobenreigh
patent: 4492620 (1985-01-01), Matsuo et al.
patent: 4522674 (1985-06-01), Ninomiya et al.
patent: 4664769 (1987-05-01), Cuomo et al.
patent: 4680507 (1987-07-01), Uemura et al.
Naitoh et al., "MoCVD Growth of InP Using Red-Phosphorous and Hydrogen Plasma" Jap. Journal of Applied Physics, vol. 26, pp. L1538-L1539.

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