Surface emission type semiconductor laser

Details Surface emission type semiconductor laser Surface emission type semiconductor laser

1991-09-09

1993-01-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 50, H01S 319

Patent

active

051812215

ABSTRACT:
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like semiconductor layer. The semiconductor laser also includes an exit-side electrode which is formed in contact with a contact layer of the column-like semiconductor layer which has an opening used to form an exit port. The opening is formed in the exit-side electrode at a position including the geometric center of the contact layer and ranging between 10% and 90% of the surface area of the contact layer.

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Hoi-Jun Yoo et al., "Phase-locked two-dimensional array of vertical cavity surface emitting lasers", Japanese Journal of Applied Physics, Extended Abstracts 22th Conf. Solid State Devices and Materials, Aug. 1990, Tokyo, Japan, pp. 521-524.
M. Ogura et al., "Surface-Emitting Laser Diode with Distributed Bragg Reflector and Buried Heterostructure", 8030 Electronics Letters 26 (1990) 4 Jan., No. 1.
Scherer et al., "Fabrication of Electrically Pumped Vertical Cavity Microlasers", Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, Oct. 17-20, 1989, pp. 289-290.
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