Process for cleaning the interior of semiconductor substrate

Details Process for cleaning the interior of semiconductor substrate Process for cleaning the interior of semiconductor substrate

1998-04-03

2000-05-09

Gulakowski, Randy

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

C03C 2300

Patent

active

060598875

ABSTRACT:
A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.

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