Micromechanical tilt sensor

Details Micromechanical tilt sensor Micromechanical tilt sensor

1991-05-17

1992-09-22

Haroian, Harry N.

Geometrical instruments

Indicator of direction of force traversing natural media

Level or plumb, terrestrial gravitation responsive

33391, G01C 906

Patent

active

051486040

ABSTRACT:
A sensor for measurement of tilt or inclination angle features a sensor element made from a monocrystalline silicon wafer, from which is etched at least one movable silicon mass. The silicon mass is freed from the surrounding wafer by an etch groove which completely penetrates the silicon wafer, and is connected to the silicon wafer by two bars lying in a common axis, so that, upon flexing or torsioning of the bars, the silicon mass is movable or rotatable about the axis of the bars. The sensor element is connected with an upper and/or a lower cover. On at least one of the covers, adjacent the silicon mass, at least two electrodes are placed. The silicon mass and the two electrodes form a pair of capacitances, and the movement or excursion of the silicon mass is detected by evaluation of the difference between the capacitances.

REFERENCES:
patent: 4549926 (1985-10-01), Corboy
patent: 4578142 (1986-03-01), Corboy
patent: 4585513 (1986-04-01), Gale
patent: 4658495 (1987-04-01), Flatley
patent: 4698132 (1987-10-01), Dennis
patent: 4955234 (1990-09-01), Marek
Walter Kern, "Chemical Etching of Silicon, Germanium, Gallium Arsenide, and Gallium Phosphide", RCA Review, Jun. 1978, vol. 39, pp. 278-308.

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