Method of fabricating GaAs devices utilizing a semi-insulating l

Details Method of fabricating GaAs devices utilizing a semi-insulating l Method of fabricating GaAs devices utilizing a semi-insulating l

1980-04-21

1981-11-03

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29572, 29589, 148175, 148187, 357 16, 357 52, 357 54, 357 58, 357 64, 357 67, H01L 21203, H01L 21223

Patent

active

042977835

ABSTRACT:
Surface recombination current in GaAs devices is reduced by means of a semi-insulating, oxygen, iron or chromium doped monocrystalline layer of AlGaAs grown by MBE. The AlGaAs layer is grown on a GaAs body and is then masked. Diffusion of suitable impurities through a window in the mask converts the exposed portions of the AlGaAs layer to low resistivity and modifies the conductivity of the underlying zone of the GaAs body. The peripheral portions of the AlGaAs layer, however, remain semi-insulating and are effective to reduce the surface recombination velocity - diffusion length product by more than an order of magnitude.

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Blum et al., "Double Heterojunction Laser Arrays", I.B.M. Tech. Discl. Bull., vol. 15, No. 7, Dec. 1972, p. 2345.
Casey et al., "Use of Oxygen-Doped AlxGa.sub.1-x As . . . Mis Structures", Appl. Phys. Letters, vol. 32 (10), May 15, 1978, pp. 678-679.
Casey et al., "Measurement of Mis . . . Layers on GaAs", J. Vac. Sci. Tech., vol. 15 (4), Jul./Aug. 1978, pp. 1408-1411.

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