Field emission device

Details Field emission device Field emission device

1994-06-30

1996-08-27

Horabik, Michael

Electric lamp and discharge devices

Electrode and shield structures

Point source cathodes

313309, 257 10, H01J 130

Patent

active

055504264

ABSTRACT:
An FED (10) utilizes a semiconductor junction to control the current flow (32) through an emission tip of the FED (10). The semiconductor junction is created between a conductive layer (12) and a doped semiconductor layer (14). The conductive layer (12) can be a metal or another doped semiconductor layer in order to form the semiconductor junction.

REFERENCES:
patent: 4370797 (1983-02-01), van Gorkom et al.
patent: 4766340 (1988-08-01), van der Mast et al.
patent: 5138237 (1992-08-01), Kane et al.
patent: 5142184 (1992-08-01), Kane
patent: 5162704 (1992-11-01), Kobori et al.
patent: 5191217 (1993-03-01), Kane et al.

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