Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1986-07-24
1990-04-17
Laroche, Eugene R.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330 54, 333 81R, H03F 360, H03G 310
Patent
active
049184016
ABSTRACT:
The requirements of extreme miniaturization, remote operation, wide bandwidth, good reproducibility in high quantities, low cost and low insertion loss are met with an incrementally adjustable distributed network arrangement in the general configuration of a distributed amplifier. The arrangement comprises delay elements (Z.sub.Dm, Z.sub.Gm) and a plurality of controlled sources (T.sub.n-2, T.sub.n-1, T.sub.ni VCCS), a signal input (E) and a signal output (A). The controlled sources (T.sub.n-2, T.sub.n-1, T.sub.ni VCCS) may be selectively turned on and off. Dual gate FETs (T.sub.1, . . . T.sub.n) are employed as controlled sources, whose first gate (G.sub.1) is connected to the input signal voltage through delay elements (Z.sub.Gm) and whose second gate (G.sub.2) is maintained at suitable dc voltages for turning the respective FETs on and off.
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LaRoche Eugene R.
Lee Benny
Moran John F.
Siemens Aktiengesellschaft
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