Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1985-06-20

1988-05-24

Sikes, William L.

G02B 610

Patent

active

047461810

ABSTRACT:
An optical semiconductor device comprising laminated thin layers made of two kinds of binary compounds to form a superlatticed optical waveguiding structure and a superlatticed active region structure, thereby achieving a quantum well effect.

REFERENCES:
Tokuda et al.; J. Appl. Phys.; vol. 60; pp. 2729-2734; 1986.
Tsang; Appl. Phys. Lett.; vol. 39; pp. 786-788; 1981.
Yasunori Tokuda et al., J. Appl. Phys., vol. 60, pp. 2729-2734 (1986).
W. T. Tsang, Appl. Phys. Lett., vol. 39, pp. 786-788 (1981).
N. K. Dutta, J. Appl. Phys., vol. 53, pp. 7211-7214 (1982).
H. Iwamura, Electronics Letters, vol. 19, pp. 180-181 (1983).

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