Semiconductor device having a metallic silicide layer for improv

Details Semiconductor device having a metallic silicide layer for improv Semiconductor device having a metallic silicide layer for improv

Filed on

1994-06-23

Date issued

1996-08-13

Examiner

Crane, Sara W.

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Combined with electrical contact or lead

SubSubClass

Of specified material other than unalloyed aluminum

Other Related Categories

257768, 257754, H01L 2348, H01L 2352, H01L 2940

Type

Patent

Status

active

Patent number

055459250

Description

ABSTRACT:
A polycrystal silicon electrode and a side wall are formed in a method for manufacturing a semiconductor device. Thereafter, air is exhausted from a film forming chamber until a vacuum degree of 4.times.10.sup.-8 Torr. A mixing gas of N.sub.2 and argon (At) is introduced into this chamber with 60 sccm and a pressure within the chamber is set to 2.0 mTorr. A percentage of N.sub.2 to argon (Ar) in this mixing gas atmosphere is set to 10%. Direct current power 6 kW is applied to a titanium target having 99.998% in purity and 12 inches in length so that the titanium target is sputtered and formed as a titanium film including nitrogen. The titanium film is processed rapidly and thermally for 30 seconds at a temperature of 750 .degree. C. by using a xenon (Xe) arc lamp. Thus, a silicide film is uniformly formed selectively on a silicon substrate and the polycrystal silicon electrode. In this manufacturing method, it is possible to prevent agglomeration of the silicide film at a high temperature processing time after the silicide film is formed.

REFERENCES:
patent: 4860086 (1989-08-01), Nakamura et al.
patent: 4916397 (1990-04-01), Masuda et al.
patent: 4974046 (1990-11-01), Vora
patent: 5012320 (1991-04-01), Yamazaki
patent: 5221853 (1993-06-01), Joshi et al.
patent: 5336911 (1994-08-01), Furuhata et al.

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