Capping layer preventing deleterious effects of As--P exchange

Details Capping layer preventing deleterious effects of As--P exchange Capping layer preventing deleterious effects of As--P exchange

1992-03-27

1993-09-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 437 96, H01L 2120

Patent

active

052468780

ABSTRACT:
A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As--P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.

REFERENCES:
patent: 4371967 (1983-02-01), Wada et al.
patent: 4987096 (1991-01-01), Ishikawa et al.
patent: 4987097 (1991-01-01), Nitta et al.
M. Razeghi et al., "Extremely High Electron Mobility in a GaAs-Ga.sub.x In.sub.1-x P Heterostructure Grown by Metalorganic Chemical Vapor Deposition", Applied Physics Letters, 1989, vol. 5, pp. 457-459.
R. Bhat et al., "A Novel Technique for the Preservation of Gratings in InP and InGaAsP and for the Simultaneous Preservation of InP, InGaAs, and InGaAsP in OMCVD", Journal of Crystal Growth, 1991, vol. 107, pp. 871-877.

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