Low cost polysilicon active P-channel load

Details Low cost polysilicon active P-channel load Low cost polysilicon active P-channel load

1993-01-22

1993-09-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 49, 437 52, 437 54, 437 44, 437191, H01L 2170

Patent

active

052468763

ABSTRACT:
A low cost active P-channel load for use in semiconductor devices is developed. The active P-channel load may be used in a variety of designs, such as functioning as a pullup device in integrated circuits and more specifically for use as a pullup resistor in SRAM devices. The P-channel load is built overlying an active NMOS device and not only takes up less die space but also allows for a simple process to construct the P-channel load. This P-channel device is easily incorporated into an SRAM process flow to build an SRAM cell made up of active NMOS devices that utilize the P-channel devices as pullups.

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