Method for making an improved high voltage thin film transistor

Details Method for making an improved high voltage thin film transistor Method for making an improved high voltage thin film transistor

1991-12-20

1993-09-21

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 257347, H01L 21283, H01L 21336, H01L 2184

Patent

active

052468704

ABSTRACT:
An improvement in a self-passivated high voltage semiconductor device is set forth with a thinned SOI layer having a linear lateral doping region coated with an oxide layer and a field plate being a part of the gate electrode layer. A high voltage SOI semiconductor device is formed having freedom from external electric fields.

REFERENCES:
patent: 4373254 (1983-02-01), Blumenfeld
patent: 4437225 (1984-03-01), Mizutani
patent: 4861731 (1989-08-01), Bhagat
Ratnam, "Novel Silicon-on-Insulator MOSFET for High Voltage Integrated Circuits", Electronics Letters, 13th Apr. 1989, vol. 25, No. 8, pp. 536-537.

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