Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1992-12-10

1993-09-21

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 118723, 118728, 20429831, 20429802, H01L 2100

Patent

active

052465322

ABSTRACT:
In a plasma processing method and a plasma processing apparatus, a substrate is processed in a plasma with a surrounding focus ring levitated by the repulsion between a magnet mounted in the focus ring and an electromagnet. The height of the focus ring relative to the substrate support is adjusted to an optimal height by adjusting the current flowing to the electromagnet. Therefore, it is possible to achieve an optimal height of the focus ring for the etching of each layer in a laminated film to enhance the uniformity of laminated film etching and to achieve precise etching.

REFERENCES:
patent: 4350578 (1982-09-01), Freiser et al.
patent: 4351805 (1982-09-01), Reisman et al.
patent: 4793975 (1988-12-01), Drage
patent: 5213658 (1993-05-01), Ishida

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