Patent
1991-01-04
1991-12-10
Mintel, William
357 19, 357 4, 357 16, H01L 2714
Patent
active
050722727
ABSTRACT:
A semiconductor light modulator for modulating incident light of a particular wavelength according to the invention includes a plurality of successively disposed, alternating p and n conductivity type semiconductor layers, each layer having substantially the same index of refraction and a thickness approximately equal to one-fourth an integer multiple of the wavelength of light to be modulated divided by the index of refraction of the layer, a p-type region extending through the successively disposed layers, an n-type region extending through the successively disposed layers and spaced from the p-type region, a first electrode disposed on and in electrical contact with the p-type region, and a second electrode disposed on and in electrical contact with the n-type region.
REFERENCES:
patent: 4561005 (1985-12-01), Shannon
patent: 4590507 (1986-05-01), Capasso et al.
patent: 4833511 (1989-05-01), Sugimoto
Chemla, "Quantum Wells for Photonics", Physics Today, May 1985, pp. 57-64.
Wood et al., "High-Speed Optical Modulation with GaAs/GaAlAs Quantum Wells in a P-I-N Diode Structure", Appl. Phys. Lett. 44(1), 1 Jan. 1984, pp. 16-18.
Ackley et al., "GaAs Light-Emitting Diodes with N-I-P-I Active Layers Fabricated by Selective Contact Diffusion", Appl. Phys. Lett., 53(2), 11 Jul., 1988, pp. 125-127.
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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