Semiconductor intergrated circuit

Details Semiconductor intergrated circuit Semiconductor intergrated circuit

1988-03-31

1991-06-25

James, Andrew J.

357 232, H01L 2176, H01L 2972

Patent

active

050271679

ABSTRACT:
The semiconductor integrated circuit of the present invention includes an electrode to which potential is supplied to apply an electric field to an isolation layer between similar semiconductor layers having ohmic electrodes and implanted into a compound semiconductor substrate. By this construction this invention reduces the development of temporary conduction in the isolation layer due to disturbance of potential barrier by .alpha. particles, and can improve pronouncedly the tolerance to .alpha. particle induced soft errors.

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Umemoto et al., "Effects of a Buried p-Layer on Alpha-Particle Immunity of MESFET's Fabricated on Semi-Insulating GaAs Substrates", IEEE Electron Device Letters EDL-7, No. 6, Jun. 1986, pp. 396-97.
Umemoto et al., "Alpha Particle Soft-Error Immunity of MESFET's with Buried p-Layer (I and II)" Abstracts 29p-X-11 and -12, presented at the Spring 1987 Meeting of the Japan Society of Applied Physics and Related Societies.

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