Gate turn-off semiconductor controlled rectifier device with hig

Details Gate turn-off semiconductor controlled rectifier device with hig Gate turn-off semiconductor controlled rectifier device with hig

1977-08-10

1979-05-22

Clawson, Jr., Joseph E.

357 20, 357 55, 357 89, H01L 2974

Patent

active

041562488

ABSTRACT:
A gate turn-off silicon controlled rectifier comprises a four-layer regenerative portion and a four-layer buffer portion having reduced regenerative capability. The buffer portion is positioned such that when a turn-off pulse is applied to the device it is the last portion which conducts current.

REFERENCES:
patent: 3239728 (1966-03-01), Aldrich et al.
patent: 3324359 (1967-06-01), Gentry
patent: 3341380 (1967-09-01), Mets et al.
patent: 3693054 (1972-09-01), Anderson
patent: 3774085 (1973-11-01), Platzoeder et al.
patent: 3855611 (1974-12-01), Neilson et al.
patent: 3943549 (1976-03-01), Jaecklin et al.

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