Fishing – trapping – and vermin destroying
Patent
1991-12-03
1993-06-15
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 11, 437978, 437 43, H01L 21265
Patent
active
052197735
ABSTRACT:
A method of fabricating a field-effect device having a gate dielectric of reoxidized nitrided oxide (RNO) provides an inversion layer mobility much higher than that of conventional RNO devices. A conductivity structure such as a metal oxide semiconductor field-effect transistor (MOSFET) is formed in a semiconductor substrate and provided with a gate dielectric of RNO. The formation of the device may or may not make use of rapid thermal processing techniques. Once formed, the device is irradiated with ionizing radiation. A voltage potential may be maintained across the gate dielectric during irradiation to further improve the inversion layer mobility. Post-radiation annealing is then performed at a controlled temperature.
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Improved Hot-Carrier Immunity in Submicrometer MOSFET's with Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing, Takashi Hari et al., IEEE Electronic device letter.
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Schmidt et al., IEEE Transactions on Electron Devices, 35(10): 1627-1632 (1988).
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Chaudhuri Olik
Massachusetts Institute of Technology
Pham Long
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