Method for depositing tungsten on silicon in a non-self-limiting

Details Method for depositing tungsten on silicon in a non-self-limiting Method for depositing tungsten on silicon in a non-self-limiting

1991-02-08

1991-12-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437245, 427253, 428620, H01L 2128

Patent

active

050717880

ABSTRACT:
A method of depositing tungsten on a substrate utilizing silicon reduction wherein the process is non-limiting as to the thickness of silicon that may be converted to tungsten. A silicon substrate is provided with at least one area of silicon material having a predetermined thickness and the substrate is exposed to a tungsten hexafluoride gas flow in a chemical vapor deposition environment. By adjusting the WF.sub.6 gas flow rate and the CVD process parameters, such as pressure, temperature and deposition time, the thickness of silicon converted to tungsten can be adjusted in order to convert the entire thickness. A novel structure having a midgap tungsten gate and tungsten source and drain metallized layers is also disclosed.

REFERENCES:
patent: 3234007 (1966-02-01), Blocher, Jr. et al.
patent: 3881242 (1965-05-01), Nuttall et al.
patent: 4032328 (1977-06-01), Hurd
patent: 4343676 (1982-08-01), Tarng
patent: 4445266 (1984-05-01), Mai et al.
patent: 4477277 (1984-10-01), D'Altilia et al.
patent: 4503601 (1985-03-01), Chiao
patent: 4517225 (1985-05-01), Broadbent
patent: 4540607 (1985-09-01), Tsao
patent: 4552783 (1985-11-01), Stoll et al.
patent: 4584207 (1986-04-01), Wilson
patent: 4587710 (1986-05-01), Tsao
patent: 4595608 (1986-06-01), King et al.
patent: 4597001 (1986-06-01), Bortscheller et al.
patent: 4609930 (1986-09-01), Yamazaki
patent: 4616401 (1986-10-01), Takeuchi
patent: 4617087 (1986-10-01), Iyer et al.
patent: 4631563 (1986-12-01), Iizuka
patent: 4906593 (1990-03-01), Shioya et al.
"Submicron Wiring Technology with Tungsten and Planarization", Kainta et al., IDEM 87-209.
"Submicron Tungsten Gate MOSFET With 10 mm Gate Oxide", Davori et al., Device Technology.
Wong, M., et al., "The Effects of Chemical Oxide on the Deposition of Tungsten by the Silicon Reduction of Tungsten Hexafluoride", J. of the Electrochemical Society, 134(9):2339 (1987).
Chen, J. Y. et al., "Refractory Metals and Metal Silicides for VLSI Devices", Solid State Technology, 27(8):145 (1984).
Busta, H. H., et al., "Film Thickness Dependence of Silicon Reduced LPCVD Tungsten on Native Oxide Thickness", J. of the Electrochemical Society, 133(6):1195 (1986).
Lifshitz, N., et al., "Selective Molybdenum Deposition by LPCVD", J. of the Electrochemical Society, 134(8A):2061 (1987).

Affiliated with

Also associated with

Rating

Method for depositing tungsten on silicon in a non-self-limiting does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for depositing tungsten on silicon in a non-self-limiting, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing tungsten on silicon in a non-self-limiting will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1040302