Visible light semiconductor laser

Details Visible light semiconductor laser Visible light semiconductor laser

1989-01-23

1990-11-27

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 357 16, 357 17, 357 60, H01S 319

Patent

active

049742310

ABSTRACT:
In a visible light semiconductor laser with (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x .ltoreq.1) crystal layers and a process for growing an(Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x.ltoreq.1) crystal, a GaAs substrate on which (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P is grown in an epitaxial method selected from MOVPE and MBE provides one selected from a (110) plane, a plane equivalent to the (110) plane, a (111) plane, and a plane equivalent to the (111) plane as a main plane for a crystal growth of (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P. As a result, a bandgap energy Eg of the (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P crystal can be the maximum value inherent to the mixed crystal independent on a growth temperature and a V/III ratio.

REFERENCES:
patent: 4383319 (1983-05-01), Shimizu et al.
Ermakov et al., "Yellow-Green In.sub.1-x Ga.sub.x P and In.sub.1-x Ga.sub.x P.sub.1-z As.sub.z LED's and Electron-Beam-Pumped Lasers Prepared by LPE and VPE", IEEE Electron Devices, vol. Ed. 26, No. 8, Aug. 1979, pp. 1190-1193.
Hirtz et al., A Low-Beam-Divergence cw(GaAl)As Double-Heterostructure Laser Grown by Low Pressure Metallorganic Chemical Vapor Deposition Process, Appl. Phys. Lett., 36(10), May 15, 1980, pp. 795-796.
Kresels, et al., "Visible GaAs.sub.0.7 P.sub.0.3 cw Heterojunction Lasers*", Appl. Phys. Letts., vol. 30, No. 5, Mar. 1, 1977, pp. 249-251.
K. Kobayashi et al., "AlgaInP Double Heterostructure . . . Phase Epitaxy", IEEE Jour. of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 704-711.
A. Gomyo et al., "Evidence of the Existence of an Ordered . . . Band-Gap Energy", Appl. Phys. Lett. 50 (11), Mar. 16, 1987, pp. 673-675.

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