High electron mobility single heterojunction semiconductor devic

Details High electron mobility single heterojunction semiconductor devic High electron mobility single heterojunction semiconductor devic

1980-12-29

1984-01-03

Edlow, Martin H.

357 15, 357 16, 357 4, H01L 2978

Patent

active

044245254

ABSTRACT:
A thin electron accumulation layer is generated along a heterojunction between two kinds of semiconductors each of which has a different electron affinity. This electron accumulation layer suffers less ionized-impurity scattering, because the thickness does not exceed the spread of an electron wave. A channel constituted with this electron accumulation enjoys an excellent electron mobility, particularly at cryogenic temperatures. A layer configuration fabricated with two different semiconductors having different electron mobilities and a similar crystal lattice coefficient, and including a single heterojunction, is effective to improve electron mobility. Such a layer configuration can be employed for production of an active semiconductor device with high electron mobility, resulting in high switching speed. The semiconductor devices including a FET, a CCD, etc., exhibit an excellent transfer conductance Gm.

REFERENCES:
patent: 3767984 (1973-10-01), Shinoda
patent: 4075652 (1978-02-01), Umebachi
patent: 4157556 (1979-06-01), Decker
patent: 4173764 (1979-11-01), de Cremoux

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