Method of making semiconductor integrated circuit device with po

Details Method of making semiconductor integrated circuit device with po Method of making semiconductor integrated circuit device with po

1989-04-28

1991-06-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437191, 437228, 437233, 437235, 437918, 437919, H01L 2170

Patent

active

050257412

ABSTRACT:
A semiconductor integrated circuit device having a wiring line of aluminum film or aluminum alloy film covered with a silicon insulation film and connected to the semiconductor region formed on the principal surface of a single crystal silicon substrate, with a polycrystalline silicon film interposed, wherein said silicon film is a polycrystalline silicon film composed of large crystal grains which is formed by depositing in amorphous state and then heat-treating the deposited film, said polycrystalline silicon film reduces the amount of silicon atoms which separates out in said wiring line. Also said wiring line is provided with a shielding film which is disposed between said insulation film and at least the upper surface and lower surface of said wiring line and which prevents silicon atoms from separating out from said insulation film.
A process for manufacturing a semiconductor integrated circuit device which comprises the steps of depositing an amorphous silicon film on the principal surface of said semiconductor region, and performing heat treatment on said silicon film, thereby converting the amorphous silicon film into a polycrystalline silicon film composed of large crystal grains.

REFERENCES:
patent: 4063967 (1987-12-01), Graul et al.
patent: 4348802 (1982-09-01), Shirato
patent: 4433468 (1984-02-01), Kawamata
patent: 4796081 (1989-01-01), Cheung et al.

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